Drift-mobility measurements and mobility edges in disordered silicons
نویسندگان
چکیده
منابع مشابه
Drift-Mobility Measurements and Mobility Edges in Disordered Silicons
Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width E , the band mobility μ0, and the attempt-toescape frequency ν. Low-te...
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We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10 cm/V), hole mobilities reach values as large as 0.01 cm/Vs at room-temperature; these values are improved about ten...
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Hole drift mobilities have been measured using photocarrier time-of-l-light for several hydrogenated amorphous silicon-carbon alloy specimens. We find that, as the band gap increases, the hole drift mobility remains essentially constant. The temperature and dispersion properties were broadly consistent with hole multiple trapping in the valence bandtail. In conjunction with previous drift mobil...
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When the Anderson Hamiltonian for independent electrons in a disordered solid is represented in a basis of extended wave functions, its matrix elements take definite values rather than distributions of values because they become averages over infinite numbers of independent site-energies. As a result of this averaging, there is a band of extended states whose width increases with disorder, but ...
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We study transport of interacting particles in weakly disordered media. Our one-dimensional system includes (i) disorder, the hopping rate governing the movement of a particle between two neighboring lattice sites is inhomogeneous, and (ii) hard core interaction, the maximum occupancy at each site is one particle. We find that over a substantial regime, the root-mean-square displacement of a pa...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2004
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/16/44/023